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2012, № 9 (145)



Ashikkalieva K.H., Kanygina O.N., Vasilchenko A.S. THE MODIFICATIONS OF MONOCRYSTAL SILICON SURFACE UNDER ISOTHERMIC AND LASER ANNEALINGSThe modifications of monocrystal silicon surface were studied under laser and isothermic annealings by optical, atomic-force microscopy and fractal analysis. It was shown that silicon surface had melted and periodic structures had formed on it under the laser annealing, whereas the redistribution of dislocations and formation of the oxidation film were revealed under the isothermic annealing. Key words: monocrystal silicon, laser annealing, isothermic annealing, dislocation, periodic structures, oxidation film.

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Authors: Ashikkalieva K.H., Kanygina O.N., Vasilchenko A.S.

Year: 2012


Editor-in-chief
Sergey Aleksandrovich
MIROSHNIKOV

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